Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-07-08
2008-07-08
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S152000
Reexamination Certificate
active
07396710
ABSTRACT:
A semiconductor device comprises a fin-type semiconductor region (fin) on a support substrate, having a pair of generally vertical side walls and an upper surface coupling the side walls; an insulated gate electrode structure traversing an intermediate portion of the fin and having side walls in conformity with the side walls of the fin; source/drain regions formed in the fin on both sides of the gate electrode; side wall insulating films including a first portion formed on the side walls of the conductive gate electrode and a second portion formed on the side walls of the fin and having an opening in the source/drain regions extending from an upper edge to a lower edge of each of the side walls; a silicide layer formed on each surface of the source/drain regions exposed in the opening of the second side wall insulating film; and source/drain electrodes contacting the silicide layers.
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Fujitsu Limited
Nguyen Thanh
Westerman, Hattori, Daniels & Adrian , LLP.
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