Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-17
2010-12-14
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29264
Reexamination Certificate
active
07851865
ABSTRACT:
Disclosed herein are embodiments of a design structure of a multiple fin fin-type field effect transistor (i.e., a multiple fin dual-gate or tri-gate field effect transistor) in which the multiple fins are partially or completely merged by a highly conductive material (e.g., a metal silicide). Merging the fins in this manner allow series resistance to be minimized with little, if any, increase in the parasitic capacitance between the gate and source/drain regions. Merging the semiconductor fins in this manner also allows each of the source/drain regions to be contacted by a single contact via as well as more flexible placement of that contact via.
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Anderson Brent A.
Bryant Andres
Ellis-Monaghan John J.
Nowak Edward J.
Gibb I.P. Law Firm LLC
International Business Machines - Corporation
Smith Zandra
Tynes, Jr. Lawrence
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