Fin-type field effect transistor structure with merged...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE29264

Reexamination Certificate

active

07851865

ABSTRACT:
Disclosed herein are embodiments of a design structure of a multiple fin fin-type field effect transistor (i.e., a multiple fin dual-gate or tri-gate field effect transistor) in which the multiple fins are partially or completely merged by a highly conductive material (e.g., a metal silicide). Merging the fins in this manner allow series resistance to be minimized with little, if any, increase in the parasitic capacitance between the gate and source/drain regions. Merging the semiconductor fins in this manner also allows each of the source/drain regions to be contacted by a single contact via as well as more flexible placement of that contact via.

REFERENCES:
patent: 6716731 (2004-04-01), Fujisawa
patent: 7074662 (2006-07-01), Lee et al.
patent: 7115947 (2006-10-01), Clark, Jr. et al.
patent: 7214991 (2007-05-01), Yeo et al.
patent: 7309626 (2007-12-01), Ieong et al.
patent: 7309634 (2007-12-01), Hong
patent: 7378710 (2008-05-01), Breitwisch et al.
patent: 7381655 (2008-06-01), Furukawa et al.
patent: 2006/0001109 (2006-01-01), Shaheen et al.
patent: 2006/0043616 (2006-03-01), Anderson et al.
patent: 2006/0134868 (2006-06-01), Yoon et al.
patent: 2006/0220120 (2006-10-01), Horch
patent: 2006/0220134 (2006-10-01), Huo et al.
patent: 2006/0261411 (2006-11-01), Hareland et al.
patent: 2007/0034972 (2007-02-01), Chau et al.
patent: 2007/0117311 (2007-05-01), Zaman
patent: 2007/0181959 (2007-08-01), Park et al.
patent: 2007/0190708 (2007-08-01), Kaneko et al.
patent: 2008/0067613 (2008-03-01), Anderson et al.
patent: 2008/0128796 (2008-06-01), Zhu et al.
patent: 2008/0188080 (2008-08-01), Furukawa et al.
patent: 2008/0230852 (2008-09-01), Yu et al.
patent: 2008/0296648 (2008-12-01), Zhu
patent: 2008/0296702 (2008-12-01), Lee et al.
patent: 2008/0303593 (2008-12-01), Knoblinger
Anderson et al., U.S. Appl. No. 11/778,217, Office Action Communication, Dec. 29, 2008, 7 pages.
PCT International Search Report for International Application No. PCT/US2008/070143, International Searching Authority Communication, Jan. 23, 2009.
USPTO Office Communication dated Nov. 18, 2009, U.S. Appl. No. 11/778,217, pp. 9.
Anderson, et al., U.S. Appl. No. 11/778,217, Office Action Communication, May 22, 2009, 12 pages.

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