Fin transistor

Details Fin transistor Fin transistor

2011-08-02

2011-08-02

Malsawma, Lex (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29051

Reexamination Certificate

active

07989856

ABSTRACT:
A fin transistor includes: a substrate; a plurality of semiconductor fins formed on the substrate; a gate electrode covering a channel region of the semiconductor fins; and a member as a stress source for the semiconductor fins included in a region of the gate electrode and the region provided between the semiconductor fins, and the member being made of a different material from the gate electrode.

REFERENCES:
patent: 2006/0180866 (2006-08-01), Zhu et al.
patent: 2007/0096206 (2007-05-01), Chidambarrao
patent: 2007/0134884 (2007-06-01), Kim et al.
patent: 2007/0221956 (2007-09-01), Inaba
patent: 2007/0252211 (2007-11-01), Yagishita
U.S. Appl. No. 12/421,143, filed Apr. 9, 2009, Okano.

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