Fin thyristor-based semiconductor device

Details Fin thyristor-based semiconductor device Fin thyristor-based semiconductor device

2006-11-14

2006-11-14

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S133000, C257S141000

Reexamination Certificate

active

07135745

ABSTRACT:
A semiconductor device having a thyristor-based device and a pass device exhibits characteristics that may include, for example, resistance to short channel effects that occur when conventional MOSFET devices are scaled smaller in connection with advancing technology. According to an example embodiment of the present invention, the semiconductor device includes a pass device having a channel in a fin portion over a semiconductor substrate, and a thyristor device coupled to the pass device. The fin has a top portion and a side portion and extends over the semiconductor substrate. The pass device includes source/drain regions separated by the channel and a gate facing and capacitively coupled to the side portion of the fin that includes the channel. The thyristor device includes anode and cathode end portions, each end portion having base and emitter regions, where one of the emitter regions is coupled to one of the source/drain regions of the pass device. The gate of the pass device is further adapted to switch the pass device between a blocking state and a conducting state via the capacitive coupling and form a conductive path between the source/drain regions. A control port is capacitively coupled to the base region of the end portion of the thyristor that is coupled to the source/drain region of the pass gate and is adapted to facilitate switching of the thyristor between blocking and conducting states.

REFERENCES:
patent: 5202750 (1993-04-01), Gough
patent: 5283201 (1994-02-01), Tsang et al.
patent: 5283456 (1994-02-01), Hsieh et al.
patent: 5324673 (1994-06-01), Fitch et al.
patent: 5338945 (1994-08-01), Baliga et al.
patent: 5340759 (1994-08-01), Hsieh et al.
patent: 5357125 (1994-10-01), Kumagi
patent: 5473176 (1995-12-01), Kakumoto
patent: 5612559 (1997-03-01), Park et al.
patent: 5637898 (1997-06-01), Baliga
patent: 5641694 (1997-06-01), Kenney
patent: 6077733 (2000-06-01), Chen et al.
patent: 6104045 (2000-08-01), Forbes et al.
patent: 6225165 (2001-05-01), Noble, Jr. et al.
patent: 6229161 (2001-05-01), Nemati et al.
patent: 6462359 (2002-10-01), Nemati et al.
patent: WO 99/63598 (1999-12-01), None
Digh Hisamoto, Wen-Chin Lee, Jakub Kedzierski, Hideki Takeuchi, Kazuya Asano, Charles Kuo, Erik Anderson, Tsu-Jae King, Jeffrey Bokor and Chenming Hu, FinFET-A Self-Aligned Double-Gate MOSFET Scalable to 20 nm, Dec. 2000.
Xuejue Huang, Wen-Chin Lee, Charles Kuo, Digh Hisamoto, Leland Chang, Jakub Kedzierski, Erik Anderson, Hideki Takeuchi, Yang-Kyu Choi, Kazuya Asano, Vivek Subramanian,Tsu-Jae King, Jeffrey Bokor and Chenming Hu, Sub 50-nm FinFET: PMOS, Sep. 1999.
Digh Hisamoto, Toru Kaga and Eiji Takeda, Impact of the Vertical SOI “DELTA” Structure on Planar Device Technology, Jun. 1991.
Farid Nemati and James D. Plummer, A Novel High Density, Low Voltage SRAM Cell with a Vertical NDR Device, Jun. 1998.
Farid Nemati and James D. Plummer, A Novel Thyristor-based SRAM Cell (T-RAM) for High-Speed, Low-Voltage, Giga-scale Memories, 1999.
Christopher J. Petti and James D. Plummer, The Field-Assisted Turn-Off Thyristor: A Regenerative Device with Voltage-Controlled Turn-Off, Aug. 1992.

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