Fin structures and methods of fabricating fin structures

Details Fin structures and methods of fabricating fin structures Fin structures and methods of fabricating fin structures

2010-06-07

2011-12-13

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S332000, C257S622000, C257SE29135, C257SE29255

Reexamination Certificate

active

08076721

ABSTRACT:
There is provided fin structures and methods for fabricating fin structures. More specifically, fin structures are formed in a substrate. The fin structures may include two fins separated by a channel, wherein the fins may be employed as fins of a field effect transistor. The fin structures are formed below the upper surface of the substrate, and may be formed without utilizing a photolithographic mask to etch the fins.

REFERENCES:
patent: 5021353 (1991-06-01), Lowrey et al.
patent: 5177027 (1993-01-01), Lowrey et al.
patent: 5804506 (1998-09-01), Haller et al.
patent: 6060783 (2000-05-01), Juengling et al.
patent: 6110798 (2000-08-01), Gonzalez et al.
patent: 6346455 (2002-02-01), Thakur et al.
patent: 6376380 (2002-04-01), Tang et al.
patent: 6469389 (2002-10-01), Juengling et al.
patent: 6492212 (2002-12-01), Ieong et al.
patent: 6794720 (2004-09-01), Yagishita et al.
patent: 6903425 (2005-06-01), Tang et al.
patent: 6936507 (2005-08-01), Tang et al.
patent: 6963104 (2005-11-01), Wu et al.
patent: 7071043 (2006-07-01), Tang et al.
patent: 7071049 (2006-07-01), Tang et al.
patent: 7084461 (2006-08-01), Anderson
patent: 7091566 (2006-08-01), Zhu et al.
patent: 7122425 (2006-10-01), Chance et al.
patent: 7199419 (2007-04-01), Haller
patent: 7241655 (2007-07-01), Tang et al.
patent: 7242057 (2007-07-01), Tang et al.
patent: 7265059 (2007-09-01), Rao et al.
patent: 7271413 (2007-09-01), Chance et al.
patent: 7279774 (2007-10-01), Seo et al.
patent: 7285812 (2007-10-01), Tang et al.
patent: 7323404 (2008-01-01), Lee
patent: 7473611 (2009-01-01), Cho et al.
patent: 7547945 (2009-06-01), Tang
patent: 2004/0191980 (2004-09-01), Rios et al.
patent: 2005/0035391 (2005-02-01), Lee et al.
patent: 2005/0179030 (2005-08-01), Seo et al.
patent: 2005/0285204 (2005-12-01), Kim et al.
patent: 2006/0151880 (2006-07-01), Tang et al.
patent: 2009/0206443 (2009-08-01), Juengling
F. Fishburn, B. Busch, J. Dale, D. Hwang, R. Lane, T. McDaniel, S. Southwick, R. Turi, H. Wang, and L. Tran, A 78nm 6F2 DRAM Technology for Multigigabit Densities, Micron Technology, Inc.—Process R&D Center, Boise, Idaho.
J.C. Sturm and K. Tokunaga, Increased Transconductance in Fully-Depleted Ultra-Thin Silicon-on-Insulator Mosfet's, Department of Electrical Engineering, Princeton University, Princeton, NJ.
Leland Chang, Yang-Kyu Choi, Daewon Ha, Pushkar Ranade, Shiying Xiong, Jeffrey Bokor, Chenming Hu, and Tus-Jae King, Extremely Scaled Silicon Nano-CMOS Devices, IEEE, vol. 91, No. 11, Nov. 2003, pp. 1860-1873.
R. Katsumata, N. Tsuda, J. Idebuchi, M. Kondo, N. Aoki, S. Ito, K. Yahashi, T. Satonaka, M. Morikado, M. Kito, M. Kido, T. Tanaka, H. Aochi and T. Hamaoto, Fin-Array-FET on Bulk Silicon for Sub-100 nm Trench Capacitor DRAM, 2003 Symposium on VLSI Technology Digest of Technical Papers.
T. Park, S. Choi, D.H. Lee, J.R. Yoo, B.C. Lee, J.Y. Kim, C.G. Lee, K.K. Chi, S.H. Hong, S.J. Syun, Y.G. Shin, J.N. Han, I.S. Park, U.I. Chung, J.T. Moon, E. Yoon, and J.H. Lee, Fabrication of Body-Tied Fin FETs (Omega MOSFETs) Using Bulk Si Wafters, 2003 Symposium on VLSI Technology Digest of Technical Papers.

Affiliated with

Also associated with

Rating

Fin structures and methods of fabricating fin structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fin structures and methods of fabricating fin structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fin structures and methods of fabricating fin structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4314646