Fin-shaped semiconductor device

Details Fin-shaped semiconductor device Fin-shaped semiconductor device

2006-10-31

2006-10-31

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000, C257S344000, C257S408000, C257S618000, C257S619000, C257S623000

Reexamination Certificate

active

07129550

ABSTRACT:
A semiconductor layer in which a primary part of a FinFET is formed, i.e., a fin has a shape which is long in a direction x and short in a direction y. A width of the fin in the direction y changes on three stages. First, in a channel area between gate electrodes each having a gate length Lg, the width of the fin in the direction y is Wch. Further, the width of the fin in the direction y in a source/drain extension area adjacent to the channel area in the direction x is Wext (>Wch). Furthermore, the width of the fin in the direction y in a source/drain area adjacent to the source/drain extension area in the direction x is Wsd (>Wext).

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