Fin semiconductor device and method for fabricating the same

Details Fin semiconductor device and method for fabricating the same Fin semiconductor device and method for fabricating the same

2006-06-30

2008-11-11

Le, Thao X. (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S243000, C257S304000

Reexamination Certificate

active

07449375

ABSTRACT:
A semiconductor device includes second to fourth semiconductor layers, a gate electrode, and an insulating film. The second semiconductor layer is formed on a first semiconductor layer and has a projecting shape. The third and fourth semiconductor layers are formed on the first semiconductor layer to be in contact with the second semiconductor layer and oppose each other via the second semiconductor layer. The gate electrode is in contact with the second semiconductor layer with a gate insulating film interposed therebetween and forms a channel in the second semiconductor layer. The insulating film is formed in the first semiconductor layer located immediately under the third and fourth semiconductor layers.

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