Fin semiconductor device and method for fabricating the same

Details Fin semiconductor device and method for fabricating the same Fin semiconductor device and method for fabricating the same

2006-12-05

2006-12-05

Parks, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With electrical contact in hole in semiconductor

C257S250000, C257S301000, C257S302000, C257S347000, C257S618000, C257SE21377, C257SE21545, C257SE21561, C257SE27112

Reexamination Certificate

active

07145220

ABSTRACT:
A semiconductor device includes second to fourth semiconductor layers, a gate electrode, and an insulating film. The second semiconductor layer is formed on a first semiconductor layer and has a projecting shape. The third and fourth semiconductor layers are formed on the first semiconductor layer to be in contact with the second semiconductor layer and oppose each other via the second semiconductor layer. The gate electrode is in contact with the second semiconductor layer with a gate insulating film interposed therebetween and forms a channel in the second semiconductor layer. The insulating film is formed in the first semiconductor layer located immediately under the third and fourth semiconductor layers.

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