Fin field effect transistors including oxidation barrier layers

Details Fin field effect transistors including oxidation barrier layers Fin field effect transistors including oxidation barrier layers

2007-10-12

2010-06-29

Landau, Matthew C (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S365000, C257SE21421, C257SE29264, C438S283000

Reexamination Certificate

active

07745871

ABSTRACT:
A method of forming a fin field effect transistor on a semiconductor substrate includes forming a fin-shaped active region vertically protruding from the substrate. An oxide layer is formed on a top surface and opposing sidewalls of the fin-shaped active region. An oxidation barrier layer is formed on the opposing sidewalls of the fin-shaped active region and is planarized to a height no greater than about a height of the oxide layer to form a fin structure. The fin structure is oxidized to form a capping oxide layer on the top surface of the fin-shaped active region and to form at least one curved sidewall portion proximate the top surface of the fin-shaped active region. The oxidation barrier layer has a height sufficient to reduce oxidation on the sidewalls of the fin-shaped active region about halfway between the top surface and a base of the fin-shaped active region. Related devices are also discussed.

REFERENCES:
patent: 6432829 (2002-08-01), Muller et al.
patent: 6458662 (2002-10-01), Yu
patent: 6583469 (2003-06-01), Fried et al.
patent: 6611029 (2003-08-01), Ahmed et al.
patent: 6768158 (2004-07-01), Lee et al.
patent: 7071048 (2006-07-01), Son et al.
patent: 7154779 (2006-12-01), Mokhlesi et al.
patent: 2004/0217433 (2004-11-01), Yeo et al.
patent: 2004/0262676 (2004-12-01), Lee et al.
patent: 2005/0145926 (2005-07-01), Lee
patent: 1020030065631 (2003-08-01), None
U.S. Appl. No. 10/936,033, filed Sep. 8, 2004.
Notice to File a Response/Amendment to the Examination Report corresponding to Korean Patent Application No. 10-2004-0040986 mailed Dec. 19, 2005.

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