Fin field effect transistors (FinFETs) and methods for...

Details Fin field effect transistors (FinFETs) and methods for... Fin field effect transistors (FinFETs) and methods for...

2008-05-06

2008-05-06

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S192000, C257S401000, C257S202000

Reexamination Certificate

active

11132652

ABSTRACT:
In a first aspect, a first method is provided for semiconductor device manufacturing. The first method includes the steps of (1) forming a first side of a fin of a fin field effect transistor (FinFET); (2) processing the first side of the fin; and (3) forming a second side of the fin while supporting the first side of the fin. Numerous other aspects are provided.

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