FIN field effect transistor with self-aligned gate

Details FIN field effect transistor with self-aligned gate FIN field effect transistor with self-aligned gate

2007-02-06

2007-02-06

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S066000, C257S072000, C438S157000, C438S159000

Reexamination Certificate

active

10695335

ABSTRACT:
The present invention provides a process for fabricating a metal oxide semiconductor field effect transistor (MOSFET) having a double-gate and a double-channel wherein the gate region is self-aligned to the channel regions and the source/drain diffusion junctions. The present invention also relates to the FIN MOSFFET structure which is formed using method of the present invention.

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Chang L., “Industrial Planar FinFET Fabrication Using Standard Processing Tools,”(last modified Feb. 21, 2001), p. 1, <http://hera.berkeley.edu/IRO/Summary/01abstracts/leland.2.html>.
Choi, Y., et al., “Asymmetrical Double Gate FinFET,” (last modified Feb. 21, 2001) p.1, <http://buffy.eecs.berkeley.edu/IRO/Summary/00abstracts/ykchoi.2.html>.

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