Fin field effect transistor having low leakage current and...

Details Fin field effect transistor having low leakage current and... Fin field effect transistor having low leakage current and...

2011-03-15

2011-03-15

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S353000, C257S401000, C257SE29137, C257SE29264, C257SE29275

Reexamination Certificate

active

07906814

ABSTRACT:
Provided is a fin field effect transistor (FinFET) having low leakage current and a method of manufacturing the same. The FinFET includes: a bulk silicon substrate; a fence-shaped body formed by patterning the substrate; an insulating layer formed on a surface of the substrate to a first height of the fence-shaped body; a gate insulating layer formed at side walls and an upper surface of the fence-shaped body at which the insulating layer is not formed; a gate electrode formed on the gate insulating layer; source/drain formed at regions of the fence-shaped body where the gate electrode is not formed. The gate electrode includes first and second gate electrodes which are in contact with each other and have different work functions. Particularly, the second gate electrode having a low work function is disposed to be close to the drain. As a result, the FinFET according to the present invention increases a threshold voltage by using a material having the high work function for the gate electrode and lowers the work function of the gate electrode overlapping with the drain, so that gate induced drain leakage (GIDL) can be reduced.

REFERENCES:
patent: 6635909 (2003-10-01), Clark et al.
patent: 6869868 (2005-03-01), Chiu et al.
patent: 7361958 (2008-04-01), Brask et al.
patent: 2005/0104096 (2005-05-01), Lee et al.

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