Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-04
2007-09-04
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S377000, C257S382000, C257S471000
Reexamination Certificate
active
10768971
ABSTRACT:
A fin field effect transistor having a substrate, a fin structure above the substrate, as well as a drain region and a source region outside the fin structure above the substrate. The fin structure serves as a channel between the source region and the drain region. The source and drain regions are formed once the gate has been produced.
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Hofmann Franz
Kretz Johannes
Roesner Wolfgang
Schulz Thomas
Dickstein , Shapiro, LLP.
Infineon - Technologies AG
Wojciechowicz Edward
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