Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-08
2008-01-08
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S288000, C257S347000, C257S368000, C257S410000, C257SE29022, C257SE29028, C257SE29128, C257SE29130
Reexamination Certificate
active
11041063
ABSTRACT:
A fin FET structure employs a negative word line scheme. A gate electrode of a fin FET employs an electrode doped with n+ impurity, and a channel doping for a control of threshold voltage is not executed, or the channel doping is executed by a low density, thereby remarkably improving characteristics of the fin FET. A semiconductor substrate is formed in a first conductive type, and a fin active region of a first conductive type is projected from an upper surface of the semiconductor substrate and is connected to the semiconductor substrate. An insulation layer is formed on the semiconductor substrate, and a gate insulation layer is formed in upper part and sidewall of the fin active region. A gate electrode is formed on the insulation layer and the gate insulation layer. Source and drain are formed in the fin active region of both sides of the gate electrode.
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Lee Choong-Ho
Lee Chul
Park Dong-Gun
Youn Jae-Man
Liu Benjamin Tzu-Hung
Marger & Johnson & McCollom, P.C.
Tran Minhloan
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