FIN-FET device structure formed employing bulk semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S330000, C257SE29130

Reexamination Certificate

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07663185

ABSTRACT:
A fin-FET device and a method for fabrication thereof both employ a bulk semiconductor substrate. A fin and an adjoining trough are formed within the bulk semiconductor substrate. The trough is partially backfilled with a deposited dielectric layer to form an exposed fin region and an unexposed fin region. A gate dielectric layer is formed upon the exposed fin region and a gate electrode is formed upon the gate dielectric layer. By employing a bulk semiconductor substrate the fin-FET device is fabricated cost effectively.

REFERENCES:
patent: 7141856 (2006-11-01), Lee et al.
patent: 7148541 (2006-12-01), Park et al.
patent: 7153733 (2006-12-01), Seo et al.
patent: 2005/0035391 (2005-02-01), Lee et al.
patent: 2005/0145932 (2005-07-01), Park et al.
patent: 2005/0239252 (2005-10-01), Ahn et al.
patent: 2006/0088967 (2006-04-01), Hsiao et al.
patent: 2006/0160302 (2006-07-01), Kim et al.
patent: 2008/0001187 (2008-01-01), Booth et al.

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