Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2006-09-19
2006-09-19
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C204S415000, C204S424000, C204S431000, C204S432000
Reexamination Certificate
active
07109563
ABSTRACT:
Systems, devices and methods are provided to improve performance of integrated circuits by providing a low-k insulator. One aspect is an integrated circuit insulator structure that includes a vapor-deposited dielectric material. The dielectric material has a predetermined microstructure formed using a glancing angle deposition (GLAD) process. The microstructure includes columnar structures that provide a porous dielectric material. One aspect is a method of forming a low-k insulator structure. In one embodiment, a predetermined vapor flux incidence angle θ is set with respect to a normal vector for a substrate surface so as to promote a dielectric microstructure with individual columnar structures. Vapor deposition and substrate motion are coordinated so as to form columnar structures in a predetermined shape. Other aspects are provided herein.
REFERENCES:
patent: 4962058 (1990-10-01), Cronin et al.
patent: 5055426 (1991-10-01), Manning
patent: 5527739 (1996-06-01), Parrillo et al.
patent: 5798559 (1998-08-01), Bothra et al.
patent: 5866204 (1999-02-01), Robbie et al.
patent: 5953625 (1999-09-01), Bang
patent: 5994776 (1999-11-01), Fang et al.
patent: 6057224 (2000-05-01), Bothra et al.
patent: 6077792 (2000-06-01), Farrar
patent: 6202065 (2001-03-01), Wills
patent: 6206065 (2001-03-01), Robbie et al.
patent: 6248422 (2001-06-01), Robbie et al.
patent: 6255156 (2001-07-01), Forbes et al.
patent: 6277728 (2001-08-01), Ahn
patent: 6284675 (2001-09-01), Jin et al.
patent: 6383924 (2002-05-01), Farrar et al.
patent: 6509623 (2003-01-01), Zhao
patent: 6582512 (2003-06-01), Geusic et al.
patent: 6589334 (2003-07-01), John et al.
patent: 6908538 (2005-06-01), Dalmia et al.
patent: 2003/0075438 (2003-04-01), Dalmia et al.
patent: 2005/0029501 (2005-02-01), Geusic et al.
“CRC handbook of chemistry and physics”,49th edition, CRC Press, Cleveland, Ohio, (1968-1969),E-61.
Abelmann, L , et al., “Oblique evaporation and surface diffusion”,Thin Solid Films, 305(1-2), (Aug. 15, 1997),1-21.
Asoh, H , “Fabrication of ideally ordered anodic porous alumina with 63 nm hole periodicity using sulfuric acid”,Journal of Vacuum Science&Technology B(Microelectronics and Nanometer Structures), 19(2), (Mar. 2001),569-72.
Chou, S Y., et al., “Imprint lithography with sub-10 nm feature size and high throughput”,Microelectronic Engineering, 35(1-4), (Feb. 1997),237-40.
Chou, S Y., et al., “Sub-10 nm imprint lithography and applications”,Journal of Vacuum Science&Technology B(Microelectronics and Nanometer Structures), 15(6), (Nov.-Dec. 1997),2897-904.
Colgan, M J., et al., “Field emission from carbon and silicon films with pillar microstructure”,Thin Solid Films, 389(1-2), (Jun. 15, 2001),1-4.
Jeng, Shin-Puu , et al., “A planarized multilevel interconnect scheme with embedded low-dielectric-constant polymers for sub-quarter-micron applications”,VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on, Jun. 7-9, 1994,73-74.
Jin, C , “Evaluation of ultra-low-k dielectric materials for advanced interconnects”,Journal of Electronic Materials, 30(4), (Apr. 2001),284-9.
Jurczak, M , “SON (silicon on nothing)—a new device architecture for the ULSI era”,VLSI Technology, 1999. Digest of Technical Papers, 1999 Symposium on, Jun. 14-16, 1999,29-30
Karunasiri, R.P. U., et al., “Thin-film growth and the shadow instability”,Physical Review Letters, 62(7), (Feb. 13, 1989),788-91.
Kingery, W D., “Introduction to ceramics”,New York, Wiley, (1963),262-263.
Kittel, C A., “Introduction to Solid State Physics”,3rd Edition, J. Wiley&Sons, (1967),25.
Malac, Marak , et al., “Thin Films Deposited at Glancing Incidence and their Applications”,Vacuum Technology&Coating, (Jul. 2001),48-53.
Messier, R , et al., “Engineered sculptured nematic thin films [solid microstructures]”,Journal of Vacuum Science&Technology A(Vacuum, Surfaces, and Films), 15(4), (Jul.-Aug. 1997),2148-52.
Mizushima, I. , “Empty-space-in-silicon technique for fabricating a silicon-on-nothing structure”,Applied Physics Letters, 77(20), American Institute of Physics, NY,(Nov. 13, 2000),3290-3292.
Morey, George W., “The properties of glass”,Published New York, Reinhold publishing corporation, Series Monograph series(American Chemical Society) ; No. 77., (1938),12, 48-49.
Nichols, F A., “Surface-(inteface) and volume-diffusion contributions to morphological changes driven by capillarity”,Transactions of the American Institute of Mining, Metallurgical and Petroleum Engineers, 233(10), (1965),1840-8.
Pandya, D K., “Obliquely deposited amorphous Ge films. I. Growth and structure”,Journal of Applied Physics, 46(7), (Jul. 1975),2966-75.
Robbie, K , et al., “Sculptured thin films and glancing angle deposition: growth mechanics and applications”,Journal of Vacuum Science&Technology A(Vacuum, Surfaces, and Films), v 15, n 3, pt.2, (May-Jun. 1997),1460-5.
Sato, T , “A new substrate engineering for the formation of empty space in silicon (ESS) induced by silicon surface migration”,International Electron Devices Meeting 1999. Technical Digest, (1999),517-20.
Sato, T , “Trench transformation technology using hydrogen annealing for realizing highly reliable device structure with thin dielectric films”,1998 Symposium on VLSI Technology Digest of Technical Papers, (1998),206-7.
Tait, R N., et al., “Modelling and characterization of columnar growth in evaporated films”,Thin Solid Films, 226(2), (Apr. 30, 1993),196-201.
Thornton, T A., “High rate thick film growth”,Annual review of materials science, vol. 7, (1977),239-60.
Treichel, H , “Low dielectric constant materials”,Journal of Electronic Materials, 30(4), (Apr. 2001),290-8.
Ahn Kie Y.
Forbes Leonard
Nelms David
Schwegman Lundberg Woessner & Kluth P.A.
Tran Mai-Huong
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