Film transistor and method for fabricating the same

Details Film transistor and method for fabricating the same Film transistor and method for fabricating the same

2011-06-14

2011-06-14

Lee, Cheung (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S099000, C438S166000, C438S795000, C257SE21297, C257SE21299, C257SE21412

Reexamination Certificate

active

07960295

ABSTRACT:
A method for fabricating a thin film transistor and a thin film transistor includes a polycrystalline silicon layer formed by irradiating an amorphous silicon layer with a laser beam through an organic layer formed on the amorphous silicon layer and removing the organic layer.

REFERENCES:
patent: 6162667 (2000-12-01), Funai et al.
patent: 2001/0053840 (2001-12-01), Ko et al.
patent: 2002/0190416 (2002-12-01), Birch et al.
patent: 2005/0074963 (2005-04-01), Fujii et al.

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