Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2009-08-03
2010-12-14
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
With measuring or testing
C438S128000, C438S129000, C438S692000, C257SE21304, C257SE21529, C257SE21530
Reexamination Certificate
active
07851236
ABSTRACT:
A film thickness prediction method of predicting a film thickness of a second processed layer after planarization includes the steps of: creating first to third actual measurement databases; obtaining a reference film thickness of a second processed layer formed on a region in which no circuit pattern exists; segmenting a first processed layer to be formed on a substrate into grid-like meshes, and obtaining a pattern area ratio occupied by a circuit pattern to be formed on a first processed layer in each mesh and further obtaining a circumferential length of the circuit pattern in each mesh; obtaining an initial thickness of the second processed layer in each mesh; and predicting the film thickness of the second processed layer after planarization from an initial film thickness predicted value and an amount of planarization Hijof the second processed layer in the mesh.
REFERENCES:
patent: 7363207 (2008-04-01), Kamon
patent: 3580036 (2004-07-01), None
patent: 3743120 (2005-11-01), None
Izuha Kyoko
Komai Naoki
Maeda Keiichi
Garber Charles D
Lee Cheung
SNR Denton US LLP
Sony Corporation
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