Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2005-09-06
2009-08-11
Coleman, W. David (Department: 2813)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S514000, C257SE21568
Reexamination Certificate
active
07572714
ABSTRACT:
The invention relates to a method of producing a film intended for applications in electronics, optics or optronics starting from an initial wafer, which includes a step of implanting atomic species through one of the faces of the wafer. This method includes forming a step of defined height around the periphery of the wafer, with the step having a mean thickness that is less than that of the wafer; and selectively implanting atomic species through a face of the wafer but not through the step to form an implanted zone at a defined implant depth with the film being defined between the face of the wafer and the implanted zone. The implantation of atomic species into the step can be prevented by forming a protective layer at least over the step or by masking the step. The invention also relates to a wafer obtainable by the method.
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TIPO's Search Report Appln. No. 095124731dated Aug. 4, 2008.
Aulnette Cécile
Cayrefourcq Ian
Mazure Carlos
Coleman W. David
Crawford Latanya
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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