Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2008-09-16
2008-09-16
Le, Thao X. (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C349S150000
Reexamination Certificate
active
11043946
ABSTRACT:
In a film substrate (FB) including a film base material (1) and conductor wiring (23) that is formed on the film base material (1), the conductor wiring (23) is arranged such that the conductor wiring thickness of an external connection portion on the film substrate to which another panel or substrate is connected is thicker than the conductor wiring thickness of conductor wiring portions (bent portions) (25) at other positions.
REFERENCES:
patent: 6217987 (2001-04-01), Ono et al.
patent: 6320135 (2001-11-01), Saito
patent: 6903794 (2005-06-01), Fukuta et al.
patent: 2003/0178724 (2003-09-01), Koyanagi
patent: 05-095208 (1993-04-01), None
patent: 06-342827 (1994-12-01), None
patent: 2002-026055 (2002-01-01), None
patent: 2002-223052 (2002-08-01), None
patent: 2003-115511 (2003-04-01), None
patent: 2003-142535 (2003-05-01), None
patent: 2003-203951 (2003-07-01), None
patent: 2004-281947 (2004-10-01), None
Arora Ajay K
Le Thao X.
Matsushita Electric - Industrial Co., Ltd.
Steptoe & Johnson LLP
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