Film structure, electronic device, recording medium, and method

Details Film structure, electronic device, recording medium, and method Film structure, electronic device, recording medium, and method

1998-03-19

2000-08-01

Speer, Timothy M.

Stock material or miscellaneous articles

Composite

Of silicon containing

428700, 428701, 428702, 365145, 117944, 505191, B32B 904

Patent

active

060964340

ABSTRACT:
A film structure includes a conductive oxide thin film formed on a substrate having a silicon (100) face at its surface. The conductive oxide thin film is an epitaxial film composed mainly of strontium ruthenate. At least 80% of the surface of the conductive oxide thin film has a Rz of up to 10 nm. On the conductive oxide thin film having excellent surface flatness and crystallinity, a ferroelectric thin film, typically of lead zirconate titanate, having surface flatness and spontaneous polarization can be formed.

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patent: 5810923 (1998-09-01), Yano et al.
patent: 5828080 (1998-10-01), Yano et al.
patent: 5912068 (1999-06-01), Jia
patent: 5919515 (1999-07-01), Yano et al.
Yano, et al., "Epitaxial Growth and Dielectric Properties of BaTio, Films on Pt Electrode by Reactive Evaporation," J. Appl. Phys. 76 (12), Dec. 15, 1994, pp. 7833-7838.
Yano, et al., "Erratum: Epitaxial Growth and Dielectric Properties of BaTio, Films and Pt Electrodes by Reactive Evaporation," [J. Appl. Phys. 76, 7833 (1994)], J. Appl. Phys. 77 (11), Jun. 1, 1995, p. 6073.
Rosetti, Jr., et al., "Stress Induced Shift of the Curia Point in Epitaxial PbTio, Thin Films," Appl. Phys. Lett. 59 (20), Nov. 11, 1991, pp. 2524-2526.

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