Method of manufacturing a semiconductor device having "shallow t

Details Method of manufacturing a semiconductor device having "shallow t Method of manufacturing a semiconductor device having "shallow t

1998-03-19

1999-10-12

Fourson, George R.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

H04L 21762

Patent

active

059666161

ABSTRACT:
A method of manufacturing a semiconductor device, in which trenches (7) are formed in a surface (2) of a silicon body (1), which trenches are filled with silicon oxide (11). The filled trenches are used as field-oxide regions (12) in integrated circuits. The silicon oxide is deposited from a gas phase and is subsequently densified by means of a thermal treatment in an NO or N.sub.2 O-containing atmosphere. The deposited silicon oxide can be densified in a very short period of time, and, in addition, the thermal treatment does not cause crystal defects. The method can suitably be used for "single wafer processing".

REFERENCES:
patent: 5387540 (1995-02-01), Poon et al.
patent: 5643825 (1997-07-01), Gardner et al.
"An Optimized Densification of the Filled Oxide for Quarter Micron Shallow Trench Isolation (STI)", H.S. Lee et al., Digest of Technical Papers of IEEE Symposium on VLSI Technology, 1996, pp. 158-159.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device having "shallow t does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device having "shallow t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device having "shallow t will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-661854