Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2008-04-01
2011-12-13
Norton, Nadine G (Department: 1713)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C216S071000, C134S001100
Reexamination Certificate
active
08075790
ABSTRACT:
A film removal method and apparatus for removing a film from a substrate are disclosed. The method comprises the steps of disposing a plasma generator and a sucking apparatus over the substrate, projecting a plasma beam from the plasma generator onto the film obliquely, disposing the sucking apparatus on a reflection path of plasma projected by the plasma generator, and sucking a by-product of an incomplete plasma reaction occurring to the film so as to keep a surface of the substrate clean, with a view to overcoming the drawbacks of deposition of the by-product which results from using the plasma as a surface cleansing means under atmospheric conditions.
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Chang Chia-Chiang
Lin Chun-Hung
Tsai Chen-Der
Wu Chin-Jyi
Dahimene Mahmoud
Industrial Technology Research Institute
Norton Nadine G
Rabin & Berdo P.C.
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