Film removal method and apparatus

Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...

Reexamination Certificate

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C216S071000, C134S001100

Reexamination Certificate

active

08075790

ABSTRACT:
A film removal method and apparatus for removing a film from a substrate are disclosed. The method comprises the steps of disposing a plasma generator and a sucking apparatus over the substrate, projecting a plasma beam from the plasma generator onto the film obliquely, disposing the sucking apparatus on a reflection path of plasma projected by the plasma generator, and sucking a by-product of an incomplete plasma reaction occurring to the film so as to keep a surface of the substrate clean, with a view to overcoming the drawbacks of deposition of the by-product which results from using the plasma as a surface cleansing means under atmospheric conditions.

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