Film forming ring and method of manufacturing semiconductor...

Details Film forming ring and method of manufacturing semiconductor... Film forming ring and method of manufacturing semiconductor...

2007-07-24

2007-07-24

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With means to increase breakdown voltage

C257S484000, C257SE21001, C257SE21170, C438S140000

Reexamination Certificate

active

11067640

ABSTRACT:
There is here disclosed a film forming ring including a ring main body being made of an insulating material and formed in an annular shape along an edge of a substrate on which a film forming process by using a material gas in a plasma state is applied, and an inner rim of the ring main body being formed higher than its outside portion.

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Notification of Reasons for Rejection mailed May 9, 2006, issued by the Japanese Patent Office in counterpart Japanese Application No. 2004-056453 and English translation thereof.

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