Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Patent
1998-01-27
2000-03-07
Beck, Shrive
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
438748, 438756, 216 91, 216 97, 427240, 118252, B05C 1102, C23F 100
Patent
active
060339888
ABSTRACT:
There is provided a spin coating process of forming a coating film through spin coating of a solution on a substrate, wherein periphery portions of the coating film are removed. The film forming method comprises the steps of: (a) initiating dropwise dispensing of a first solvent having a relatively low affinity for the coating film at a position slightly insider a periphery of the substrate covered by the coating film; (b) initiating dropwise dispensing of a second solvent having a relatively high affinity for the coating film at a position closer to the periphery of the substrate as compared to the position of the dropwise dispensing of the first solvent, where the dropwise dispensing of the second solvent is initiated simultaneous to or after the initiation of the dropwise dispensing of the first solvent; (c) stopping the dropwise dispensing of the first solvent; and (d) stopping the dropwise dispensing of the second solvent after stopping the dropwise dispensing of the first solvent.
REFERENCES:
patent: 5779928 (1998-07-01), Yamashita et al.
Beck Shrive
Calcagni Jennifer
Kawasaki Steel Corporation
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