Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-10-03
2010-12-07
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S626000, C438S648000, C438S656000, C438S678000, C438S685000, C257SE21584
Reexamination Certificate
active
07846839
ABSTRACT:
An adhesion between a Cu diffusion barrier film and a Cu wiring in a semiconductor device is improved and reliability of the semiconductor device is improved. A film forming method for forming a Cu film on a substrate to be processed is provided with a first process of forming an adhesion film on the Cu diffusion barrier film formed on the substrate to be processed, and a second process of forming a Cu film on the adhesion film. The adhesion film includes Pd.
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Kojima Yasuhiko
Yoshii Naoki
Lee Kyoung
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Richards N Drew
Tokyo Electron Limited
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