Film forming method, semiconductor device manufacturing...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S626000, C438S648000, C438S656000, C438S678000, C438S685000, C257SE21584

Reexamination Certificate

active

07846839

ABSTRACT:
An adhesion between a Cu diffusion barrier film and a Cu wiring in a semiconductor device is improved and reliability of the semiconductor device is improved. A film forming method for forming a Cu film on a substrate to be processed is provided with a first process of forming an adhesion film on the Cu diffusion barrier film formed on the substrate to be processed, and a second process of forming a Cu film on the adhesion film. The adhesion film includes Pd.

REFERENCES:
patent: 5306666 (1994-04-01), Izumi
patent: 6249055 (2001-06-01), Dubin
patent: 6362099 (2002-03-01), Gandikota et al.
patent: 2002/0050459 (2002-05-01), Matsuda et al.
patent: 2002/0090814 (2002-07-01), Inoue et al.
patent: 2002/0119657 (2002-08-01), Gandikota et al.
patent: 2003/0157750 (2003-08-01), Narukawa
patent: 2005/0124154 (2005-06-01), Park et al.
patent: 2000 260865 (2000-09-01), None
patent: 2001 23989 (2001-01-01), None
patent: 2002 203859 (2002-07-01), None
patent: 2004-193499 (2004-07-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Film forming method, semiconductor device manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Film forming method, semiconductor device manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Film forming method, semiconductor device manufacturing... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4181724

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.