Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-12-11
2007-12-11
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257S021000
Reexamination Certificate
active
10821843
ABSTRACT:
Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%≦Pr<100%, and generating a plasma within the plasma processing chamber so as to form a film of silicon oxide on a substrate to be processed.
REFERENCES:
patent: 5028566 (1991-07-01), Lagendijk
patent: 6323142 (2001-11-01), Yamazaki et al.
patent: 2004/0209487 (2004-10-01), Choi et al.
patent: 11-279773 (1999-10-01), None
M. Goto, et al., Jpn. J. Appl. Phys., vol. 42, Part 1, No. 11, pp. 7033-7038, “Surface Wave Plasma Oxidation at Low Temperature Under Rare Gas Dilution”, 2003.
M. Goto, et al., “Surface Wave Plasma Oxidation at Low Temperature for Gate Insulator of Poly-Si TFTs”, Proceedings of The Ninth International Display Workshops, Dec. 4-6, 2002, pp. 355-358.
Reiji Morioka, et al., “Deposition of High-kZirconium Oxides in VHF Plasma-Enhanced CVD Using Metal-Organic Precursor”, Collection of Lecture Documents of the “20thPlasma Processing Research Meeting” sponsored by Plasma Electronics Branch of Applied Physics Institute, Jan. 29, 2003, pp. 317-318.
Azuma Kazufumi
Goto Masashi
Nakata Yukihiko
Advanced LCD Technologies Development Center Co. Ltd.
Geyer Scott B.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
LandOfFree
Film-forming method, method of manufacturing semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Film-forming method, method of manufacturing semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Film-forming method, method of manufacturing semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3854995