Film-forming method for X-ray mask

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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378 35, G03F 900

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active

058798404

ABSTRACT:
A film-forming method and an apparatus for a X-ray mask and a film-forming apparatus which are able to diminish stress unevenness in the X-ray mask to zero when a X-ray absorber is formed on a mask substrate by sputtering a target 3 during rotation of the mask substrate. Firstly, a dummy mask substrate is prepared instead of a mask substrate. A dummy X-ray absorber 6 is formed on this dummy X-ray substrate 5 within a sputtering range. Secondly, a stress distribution is measured at every position along a straight line passing through a center of the dummy X-ray absorber 6 and then a desirable stress distribution range X is selected at such a location so as to have a good linear characteristic in a portion of a compressive stress curve which decreases toward an outer periphery of the dummy X-ray absorber 6 in the stress distribution. A center of the desirable stress distribution range X is selected as a rotation center, the mask substrate is placed within the desirable stress distribution range X, and the X-ray absorber is formed by this film-forming technology.

REFERENCES:
patent: 4855197 (1989-08-01), Zapka et al.
patent: 5677090 (1997-10-01), Marumoto et al.
"Total evaluation of W-Ti absorber for X-ray mask", Kenji Marumoto et al., Electro-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV, vol. 2194, pp. 221-230 (1994).
"A strategy for Highly Accurate X-ray masks", Kenji Marumoto et al., Digest of papers XEL'95, p. M6-2-1.

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