Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-07-10
2007-07-10
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S763000, C438S784000, C438S787000, C257SE21628
Reexamination Certificate
active
10855328
ABSTRACT:
A method of forming films in a semiconductor device that can appropriately control a resistance value of a thin film resistance on an ozone TEOS film while preventing a metal thin film from remaining around a surface step unit after the metal thin film was dry etched. First, as shown in FIG.1A, a step unit with the height of about 1 μm is formed by forming elements such as HBT on a semiconductor substrate made up of semi-insulating GaAs. Next, as shown in FIG.1B, a first ozone TEOS film with the thickness of 900 nm by a Normal pressure CVD method using mixed gas of tetraethoxysilane with ozone. Then, a second ozone TEOS film with the thickness of 100 nm is formed by reducing the ozone concentration to 10 g/m3, while maintaining the substrate temperature at 350° C.
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Hikita Masahiro
Uemoto Yasuhiro
Greenblum & Bernstein P.L.C.
Lee Cheung
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