Film forming method for dielectric film

Details Film forming method for dielectric film Film forming method for dielectric film

2011-01-11

2011-01-11

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C118S7230AN, C257SE21273, C438S787000, C438S788000, C700S123000, C700S181000

Reexamination Certificate

active

07867922

ABSTRACT:
The present invention is a film forming method for an SiOCH film, comprising a unit-film-forming step including: a deposition step of depositing an SiOCH film element by using an organic silicon compound as a raw material and by using a plasma CVD method; and a hydrogen plasma processing step of providing a hydrogen plasma process to the deposited SiOCH film element, wherein the unit-film-forming step is repeated several times so as to form an SiOCH film on a substrate.

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