Film forming method, fabrication process of semiconductor...

Details Film forming method, fabrication process of semiconductor... Film forming method, fabrication process of semiconductor...

2006-08-23

2010-10-19

Tsai, H. Jey (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S676000, C438S679000, C438S758000

Reexamination Certificate

active

07816254

ABSTRACT:
A film-forming method for forming a metal film on a substrate by a sputtering process includes the steps of depressurizing a processing space, in which deposition of the metal film is caused by the sputtering process, applying a DC bias voltage between the substrate and a target disposed in the processing space so as to face the substrate, and igniting plasma by introducing secondary electrons to the processing space from a secondary electron source.

REFERENCES:
patent: 2001/0011890 (2001-08-01), Kawasaki
patent: 2001/0052455 (2001-12-01), Hong
patent: 2002/0040969 (2002-04-01), Hung et al.
patent: 2002/0086534 (2002-07-01), Cuomo et al.
patent: 07109108 (1995-04-01), None
patent: 10-324969 (1998-12-01), None
patent: 2000-105916 (2000-04-01), None
patent: 2004-244690 (2004-09-01), None

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