Film forming method employing reactive and reducing gases...

Details Film forming method employing reactive and reducing gases... Film forming method employing reactive and reducing gases...

2003-02-11

2009-12-15

Turocy, David (Department: 1792)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S569000, C427S250000, C427S255280

Reexamination Certificate

active

07632550

ABSTRACT:
A film forming method comprising: supplying a reactive gas comprising a compound including a metal atom between facing electrodes; arranging a substrate between the electrodes; making the reactive gas in a plasma state by applying a voltage between the electrodes under atmospheric pressure or under a pressure in a vicinity of the atmospheric pressure and discharging; and forming a metal film on a surface of the substrate by supplying a reducing gas having a reducing property into a plasma atmosphere in which the reactive gas in the plasma state exists.

REFERENCES:
patent: 4415602 (1983-11-01), Brodie et al.
patent: 4438154 (1984-03-01), Kato et al.
patent: 4626448 (1986-12-01), Hays
patent: 5194291 (1993-03-01), D'Aoust et al.
patent: 5304407 (1994-04-01), Hayashi et al.
patent: 5384167 (1995-01-01), Nishiwaki et al.
patent: 5731634 (1998-03-01), Matsuo et al.
patent: 6028014 (2000-02-01), Sukjarev
patent: 6306756 (2001-10-01), Hasunuma et al.
patent: 6342277 (2002-01-01), Sherman
patent: 6441554 (2002-08-01), Nam et al.
patent: 6835425 (2004-12-01), Fukuda et al.
patent: 2002/0013487 (2002-01-01), Norman et al.
patent: 2002/0094387 (2002-07-01), Bhan
patent: 2030180 (1980-04-01), None
patent: 4337076 (1992-11-01), None
patent: 794425 (1995-04-01), None
patent: 9181016 (1997-07-01), None
patent: 10154598 (1998-06-01), None
patent: 63203772 (1998-08-01), None
patent: 1129873 (1999-02-01), None
patent: 11236667 (1999-08-01), None
patent: 11236676 (1999-08-01), None
patent: 2000204475 (2000-07-01), None
patent: 2000204476 (2000-07-01), None
patent: 2000282243 (2000-10-01), None
patent: 2000303175 (2000-10-01), None
patent: 2001102198 (2001-04-01), None
patent: 2001271167 (2001-10-01), None
patent: 2002-110397 (2002-04-01), None
patent: WO02/48428 (2002-06-01), None
Mizuno et al, Characterization of Ultra-Short Pulsed Discharge Plasma for CVD Processing, IEE Transaction on Industry Applications, vol. 29, No. 3. 1993. pp. 656-660.
Partial European Search Report EP 03 25 0802 One page English Abstract, Patent Abstracts of Japan.
Publication No. 11236676, Publication date: Aug. 31, 1999 One Page English Abstract, Patent Abstracts of Japan.
Publication No. 2000282243, Publication date: Oct. 10, 2000 One page English Abstracts, Patent Abstracts of Japan.
Publication No. 2000204476, Publication date: Jul. 25, 2000 One page English Abstract, Patent Abstracts of Japan.
Publication No. 2000204475, Publication date: Jul. 25, 2000.

Affiliated with

Also associated with

Rating

Film forming method employing reactive and reducing gases... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Film forming method employing reactive and reducing gases..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Film forming method employing reactive and reducing gases... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4125279