Film forming method and substrate processing apparatus

Details Film forming method and substrate processing apparatus Film forming method and substrate processing apparatus

2011-07-19

2011-07-19

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C118S704000, C257SE21170

Reexamination Certificate

active

07981794

ABSTRACT:
A barrier layer including a titanium film is formed at a low temperature, and a TiSixfilm is self-conformably formed at the interface between the titanium film and the base. In forming the TiSixfilm507, the following steps are repeated without introducing argon gas: a first step of introducing a titanium compound gas into the processing chamber to adsorb the titanium compound gas onto the silicon surface of a silicon substrate502; a second step of stopping introduction of the titanium compound gas into the processing chamber and removing the titanium compound gas remaining in the processing chamber; and a third step of generating plasma in the processing chamber while introducing hydrogen gas into the processing chamber to reduce the titanium compound gas adsorbed on the silicon surface and react it with the silicon in the silicon surface to form the TiSixfilm507.

REFERENCES:
patent: 5747384 (1998-05-01), Miyamoto
patent: 6143377 (2000-11-01), Miyamoto
patent: 6524952 (2003-02-01), Srinivas et al.
patent: 7244668 (2007-07-01), Kim
patent: 2006/0127601 (2006-06-01), Murakami et al.
patent: 4 196418 (1992-07-01), None
patent: 5 136087 (1993-06-01), None
patent: 8 176823 (1996-07-01), None
patent: WO 2005015622 (2005-02-01), None

Affiliated with

Also associated with

Rating

Film forming method and substrate processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Film forming method and substrate processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Film forming method and substrate processing apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2652166