Film forming method and film forming device

Details Film forming method and film forming device Film forming method and film forming device

2005-10-25

2005-10-25

Chen, Bret (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S576000, C427S577000, C118S7230AN, C118S728000

Reexamination Certificate

active

06958175

ABSTRACT:
A plasma10is generated within a film formation chamber2, and mainly a nitrogen gas11is excited within the film formation chamber2. Then, the excited nitrogen gas11is reacted with a diborane gas13diluted with a hydrogen gas, thereby forming a boron nitride film15on a substrate4. Thus, the boron nitride film15excellent in mechanical and chemical resistance, high in thermal conductivity, and having a low relative dielectric constant κ can be formed speedily.

REFERENCES:
patent: 4869923 (1989-09-01), Yamazaki
patent: 5316804 (1994-05-01), Tomikawa et al.
patent: 5320878 (1994-06-01), Maya
patent: 5846613 (1998-12-01), Neuville
patent: 63-83273 (1988-04-01), None
patent: 64-17867 (1989-01-01), None
patent: 3-79769 (1991-04-01), None

Affiliated with

Also associated with

Rating

Film forming method and film forming device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Film forming method and film forming device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Film forming method and film forming device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3446221