Film forming method and film forming device

Details Film forming method and film forming device Film forming method and film forming device

2008-01-01

2008-01-01

Meeks, Timothy (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S255230

Reexamination Certificate

active

07314651

ABSTRACT:
A plasma10is generated within a film formation chamber2, and mainly a nitrogen gas11is excited within the film formation chamber2. Then, the excited nitrogen gas11is mixed with a diborane gas13diluted with a hydrogen gas to react them, thereby forming a boron nitride film15on a substrate4. At the initial stage of film formation, the nitrogen gas11is supplied in excess to suppress the occurrence of an amorphous phase on the interface. As a result, the boron nitride film15improved in moisture absorption resistance on the interface with the substrate and maintaining low dielectric constant properties is formed.

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