Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2011-06-28
2011-06-28
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S778000, C427S255190, C427S255360
Reexamination Certificate
active
07968472
ABSTRACT:
The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO2film on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiO2film on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrO2film forming sequences and the SiO2film forming sequences are repeated for the adjusted number of times of performances.
REFERENCES:
patent: 6534395 (2003-03-01), Werkhoven et al.
patent: 6866890 (2005-03-01), Kiryu et al.
patent: 7169673 (2007-01-01), Ahn et al.
patent: 7423311 (2008-09-01), Ahn et al.
patent: 7491654 (2009-02-01), Song et al.
patent: 2002/0001974 (2002-01-01), Chan
patent: 2006/0199384 (2006-09-01), Ando et al.
patent: 2010/0266751 (2010-10-01), Putkonen
patent: 1013793 (2000-06-01), None
patent: 2001-152339 (2001-06-01), None
patent: 2006-310754 (2006-11-01), None
Harada Katsushige
Ishida Yoshihiro
Sugawara Takuya
Booker Vicki B
Cantor & Colburn LLP
Landau Matthew C
Tokyo Electron Limited
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