Film-forming method and film-forming apparatus

Details Film-forming method and film-forming apparatus Film-forming method and film-forming apparatus

1998-09-10

2000-12-26

Niebling, John F.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438790, H01L 2131, H01L 21469

Patent

active

061659169

ABSTRACT:
The present invention provides a method of forming a film, having the step of allowing a first chemical substance to be adsorbed on a surface of a silicon substrate by a gaseous phase method, and the step of introducing a gas containing a second chemical substance onto the substrate surface having the first chemical substance adsorbed thereon for forming a silicon compound layer on the silicon substrate, the silicon compound layer consisting essentially of a silicon compound formed by a reaction between the first chemical substance adsorbed on the substrate surface and the second chemical substance. The film-forming method of the present invention is featured in that one of the first and second chemical substances contains silicon and the other chemical substance contains an element other than silicon, that the step of forming the silicon compound layer is continued until the reaction between the first chemical substance and the second chemical substance is saturated, and that the step of allowing the first chemical substance to be adsorbed on the substrate surface and the step of forming the silicon compound layer are carried out alternately and a plurality of times.

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patent: 5525550 (1996-06-01), Kato
patent: 5605867 (1997-02-01), Sato et al.

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