Film forming method

Details Film forming method Film forming method

2007-12-25

2007-12-25

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S585000, C438S649000, C438S681000, C438S685000

Reexamination Certificate

active

11141314

ABSTRACT:
A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature.A film forming material for forming molybdenum films, molybdenum silicide films, or tungasten nitride films is provided, wherein a Mo source of said film is one or more chemical compounds selected from the group consisting of a hexadimethylaminodimolybdenum, a hexaethylmethylaminodimolybdenum, and a hexadiethylaminodimolybdenum.

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