Film forming method

Details Film forming method Film forming method

2006-10-17

2006-10-17

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S792000

Reexamination Certificate

active

07122486

ABSTRACT:
CVD is performed without damaging a micro-fabricated semiconductor element. An organic material gas containing amine is used as deposition material gas. The material gas is introduced into a vacuum chamber and ultraviolet light radiated from each of lamps is applied onto an object to be processed that is placed in the chamber, thereby causing chemical vapor deposition to be carried out, whereby a film is grown at a temperature such that no damage is given to a semiconductor element or the like of the object.

REFERENCES:
patent: 6334801 (2002-01-01), Kawade et al.
patent: 6586056 (2003-07-01), Arkles et al.
patent: 6953600 (2005-10-01), Yokoyama et al.
patent: 06-283520 (1994-10-01), None
patent: 11-214670 (1999-08-01), None
patent: 2001-015698 (2001-01-01), None

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