Film forming method

Details Film forming method Film forming method

2011-04-26

2011-04-26

Meeks, Timothy H (Department: 1715)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

Reexamination Certificate

active

07931945

ABSTRACT:
The present invention provides a particle measuring system which is provided in a processing system40which generates an atmosphere obtained by exhausting air or a gas in a processing chamber48by a vacuum pump98and applies a process concerning semiconductor manufacture to a wafer W in the atmosphere, attached to an exhaust pipe90which connects an exhaust opening86of the processing chamber48with the vacuum pump98, and measures the number of the particles in the exhaust gas, and a measuring method thereof, the system and method providing a processing system and a cleaning method which terminate etching process by determining an end point based on the number of the particles in the exhaust gas and perform cleaning of unnecessary films.

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