Film forming method

Details Film forming method Film forming method

1999-08-30

2000-12-19

Bowers, Charles

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

438781, 438782, 438758, 427581, 427532, 427553, 427510, H01L 2126, H01L 21324, H01L 2142, H01L 21477

Patent

active

061627453

ABSTRACT:
A film forming method includes the steps of forming a solution film, by dropwise supplying a solution containing solid contents in a solvent and volatilizing the solvent, and selectively forming a film of the solid contents on a to-be-processed substrate at predetermined areas, the method comprising the steps of selectively irradiating an energy beam onto that substrate surface to allow the substrate surface to be modified and forming a filmed area having a high affinity for the solvent and a non-filmed area having a low affinity for the solvent, dropwise supplying the solution to the substrate surface and forming the solution film, and volatilizing the solvent from the solution film and, by doing so, forming a solid contents film selectively on the substrate surface selectively at filmed areas.

REFERENCES:
patent: 5744397 (1998-04-01), Sheen
patent: 5840622 (1998-11-01), Miles et al.
patent: 5989983 (1999-11-01), Goo et al.
U.S. application serial No. 09/335,508 has been considered.

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