Film forming material, film forming method, and silicide film

Details Film forming material, film forming method, and silicide film Film forming material, film forming method, and silicide film

2006-05-16

2006-05-16

Gurley, Lynne A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S651000, C438S655000, C438S664000, C438S681000, C438S682000

Reexamination Certificate

active

07045457

ABSTRACT:
A technique is provided of forming silicide films usable for next-generation transistors through a CVD process. In the technique of forming a silicide film formed of Ni and Si, where one or more chemical compounds represented with the following general formula [I] are used as an Ni source:where R1, R2, R3, R4, R5, R6, R7, R8, R9, or R10is H or a hydrocarbon group.

REFERENCES:
patent: 4507401 (1985-03-01), Dubois et al.
patent: 4992305 (1991-02-01), Erbil
patent: 6753245 (2004-06-01), Choi
patent: 6777565 (2004-08-01), Choi
patent: 2002/0015789 (2002-02-01), Choi
patent: 2003/0073860 (2003-04-01), Choi
patent: 2004/0197470 (2004-10-01), Choi
patent: 2004/0219369 (2004-11-01), Garg et al.
patent: 06-204173 (1994-07-01), None

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