Film forming apparatus, substrate for forming oxide thin...

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

Reexamination Certificate

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Details

C204S298130, C204S298280, C118S506000, C118S715000, C118S730000, C118S069000, C118S058000, C118S719000

Reexamination Certificate

active

06913675

ABSTRACT:
The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber.The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supplying to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming.

REFERENCES:
patent: 6113752 (2000-09-01), Hollstein
patent: 6413380 (2002-07-01), Pinarbasi
patent: 6692795 (2004-02-01), Won et al.

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