Film formation method with deposition source position control

Coating processes – Coating by vapor – gas – or smoke

Reexamination Certificate

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Details

C427S008000

Reexamination Certificate

active

07959971

ABSTRACT:
When a multiple-panel forming process for producing a plurality of panels on a large-size substrate is employed, when production thereof is continued over a long period, or in other cases, a predetermined film thickness distribution can be stably obtained according to a method of the present invention. Vapor deposition on a substrate is performed by evaporating particles from a vapor deposition source arranged opposite to the substrate in a vacuum chamber. By changing a distance between the substrate and an opening provided at the vapor deposition source by a vapor deposition source position control mechanism, change with elapse of time in the film thickness distribution of a thin film formed on the substrate is controlled.

REFERENCES:
patent: 3639165 (1972-02-01), Rairden, III
patent: 2003/0234371 (2003-12-01), Ziegler
patent: 2004/0016400 (2004-01-01), Kim et al.
patent: 2000-265263 (2000-09-01), None
patent: 2004-035964 (2004-02-01), None
patent: 2005-120441 (2005-05-01), None
patent: 2005-336535 (2005-12-01), None
Asada, JP 2004-35964, English machine translation, May 2004.
Osamu, Machine trans of JP2005-120441, pub: May 2005.

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