Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-11-01
2005-11-01
Fourson, Geroge (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C427S096400, C427S240000
Reexamination Certificate
active
06960540
ABSTRACT:
Relative movement occurs between the in-process substrate and the dropping section. While the substrate is rotated, the dropping section is relatively moved from an approximate center of the substrate toward an outer periphery thereof. While the dropping section relatively moves from the approximate center of the in-process substrate toward the outer periphery, the rotational frequency w for the substrate is decreased so that the solution film should not move due to the centrifugal force applied to a dropped solution film. Concurrently, feed rate v for the liquid from the dropping section is increased to form a solution film on the in-process substrate.
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Ito Shin'ichi
Okumura Katsuya
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Fourson Geroge
Garcia Joannie Ade lle
Kabushiki Kaisha Toshiba
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