Film formation method and apparatus for semiconductor process

Details Film formation method and apparatus for semiconductor process Film formation method and apparatus for semiconductor process

2008-04-08

2008-04-08

Clark, S. V. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S488000

Reexamination Certificate

active

11091414

ABSTRACT:
A film formation method for a semiconductor process is arranged to form an amorphous silicon film on a target substrate by CVD in a process field within a reaction container, while supplying a first process gas containing silicon into the process field, and setting the process field at a first temperature of 550° C. or more and at a first pressure. The method is arranged to subsequently poly-crystallize the amorphous silicon film by a heat process in the process field to form a poly-silicon film, while supplying a second process gas different from the first process gas into the process field, and setting the process field at a second temperature higher than the first temperature and at a second pressure.

REFERENCES:
patent: 4693759 (1987-09-01), Noguchi et al.
patent: 5863598 (1999-01-01), Venkatesan et al.
patent: 6797651 (2004-09-01), Hagino et al.
patent: 2002/0142567 (2002-10-01), Hagino et al.
patent: 2002/0192909 (2002-12-01), Weimer
patent: 2001-68662 (2001-03-01), None

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