Film formation apparatus for semiconductor process and...

Details Film formation apparatus for semiconductor process and... Film formation apparatus for semiconductor process and...

2011-06-21

2011-06-21

Geyer, Scott B (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S791000, C438S905000, C118S719000, C118S724000

Reexamination Certificate

active

07964516

ABSTRACT:
A method for using a film formation apparatus includes, in order to inhibit metal contamination: performing a cleaning process using a cleaning gas on an inner wall of a process container and a surface of a holder with no productive target objects held thereon; and then, performing a coating process of forming a silicon nitride film by alternately supplying a silicon source gas and a nitriding gas to cover with the silicon nitride film the inner wall of the process container and the surface of the holder with no productive target objects held thereon.

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