Film formation apparatus and method of using the same

Details Film formation apparatus and method of using the same Film formation apparatus and method of using the same

2005-03-28

2008-12-30

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S689000, C257SE21293

Reexamination Certificate

active

07470637

ABSTRACT:
A method of using a film formation apparatus for a semiconductor process includes removing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus, and then chemically planarizing the inner surface of the reaction chamber by a planarizing gas. The inner surface contains as a main component quartz or silicon carbide. The removing is performed while supplying the cleaning gas into the reaction chamber, and setting the reaction chamber at a first temperature and first pressure to activate the cleaning gas. The planarizing is performed while supplying the planarizing gas into the reaction chamber, and setting the reaction chamber at a second temperature and second pressure to activate the planarizing gas. The planarizing gas contains fluorine and hydrogen fluoride. The second temperature is within a range of from 300 to 800° C.

REFERENCES:
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 3-293726 (1991-12-01), None
patent: 2005-277302 (2005-10-01), None
Kameda et al , JP Patent ApplicationNo. 2004-91876, as relied upon in the Notification of Reasons for Rejection of Japanese Patent Application 2005-045244 and Derwent Abstract.

Affiliated with

Also associated with

Rating

Film formation apparatus and method of using the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Film formation apparatus and method of using the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Film formation apparatus and method of using the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4025950