Film formation apparatus and method for using the same

Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...

Reexamination Certificate

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C134S022100, C134S026000, C134S902000, C118S066000

Reexamination Certificate

active

07959737

ABSTRACT:
A method for using a film formation apparatus for a semiconductor process includes a first cleaning process of removing by a first cleaning gas a by-product film from an inner surface of a reaction chamber of the film formation apparatus, while supplying the first cleaning gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure to activate the first cleaning gas. The method further includes a second cleaning process of then removing by a second cleaning gas a contaminant from the inner surface of the reaction chamber, while supplying the second cleaning gas into the reaction chamber, and setting the interior of the reaction chamber at a second temperature and a second pressure to activate the second cleaning gas. The second cleaning gas includes a chlorine-containing gas.

REFERENCES:
patent: 5709757 (1998-01-01), Hatano et al.
patent: 6503843 (2003-01-01), Xia et al.
patent: 7288284 (2007-10-01), Li et al.
patent: 2003/0037802 (2003-02-01), Nakahara et al.
patent: 03-293726 (1991-12-01), None

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