Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Reexamination Certificate
2011-06-14
2011-06-14
Norton, Nadine G (Department: 1713)
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
C134S022100, C134S026000, C134S902000, C118S066000
Reexamination Certificate
active
07959737
ABSTRACT:
A method for using a film formation apparatus for a semiconductor process includes a first cleaning process of removing by a first cleaning gas a by-product film from an inner surface of a reaction chamber of the film formation apparatus, while supplying the first cleaning gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure to activate the first cleaning gas. The method further includes a second cleaning process of then removing by a second cleaning gas a contaminant from the inner surface of the reaction chamber, while supplying the second cleaning gas into the reaction chamber, and setting the interior of the reaction chamber at a second temperature and a second pressure to activate the second cleaning gas. The second cleaning gas includes a chlorine-containing gas.
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Mizunaga Satoshi
Nishimura Toshiharu
Okada Mitsuhiro
Tonegawa Yamato
Dahimene Mahmoud
Norton Nadine G
Smith , Gambrell & Russell, LLP
Tokyo Electron Limited
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