Thick field oxide termination for trench schottky device

Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With means to prevent edge breakdown

Reexamination Certificate

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Details

C257SE33051, C257SE29013, C438S570000

Reexamination Certificate

active

07973381

ABSTRACT:
A schottky diode of the trench variety which includes a trench termination having a thick insulation layer that is thicker than the insulation layer inside the trenches in its active region.

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Hsu et al., “A novel trench termination design for 100-V TMBS diode application”, Electron Device Letters, IEEE, vol. 22, Issue 11, Nov. 2001 pp. 551-552.

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